Samsung announces high-speed SSD 990 EVO, it will cost $210 for 2 TB
Samsung has announced the launch of its latest NVMe SSD, the Samsung SSD 990 EVO. This new SSD is designed to upgrade your computer and improve performance in everyday gaming, business and creative workflows. Or install it in a new high-performance computer. In practice, such drives are in demand by gamers or computer owners who want uncompromising performance.
The Samsung SSD 990 EVO delivers a 43% performance boost over its predecessor, the 970 EVO Plus. It boasts sequential read speeds of up to 5,000 megabytes per second (MB/s) and write speeds of up to 4,200 MB/s. Random read and write speeds have also increased to 700,000 and 800,000 input-output operations per second (IOPS), respectively.
According to the manufacturer, one of the standout features of the 990 EVO is its improved energy efficiency, which is 70% better than the 970 EVO Plus. This allows users to work on their laptops for extended periods of time, saving battery power. The SSD also supports Modern Standby, which enables instant on/off with uninterrupted internet connectivity and uninterrupted notifications even in low power states.
The Samsung SSD 990 EVO is positioned as a "one-stop solution for current and future computing needs". It supports PCIe 4.0 x4 and PCIe 5.0 x2 interfaces, making it compatible with a wide range of PCs. The SSD is available in 1TB and 2TB capacities, providing ample storage space for gaming, business and creative work.
To optimise the functionality of the Samsung SSD 990 EVO, users can use Samsung's proprietary Magician software. It offers a set of optimisation tools, including data migration and protection, drive health monitoring and timely firmware updates.
The Samsung SSD 990 EVO is now available worldwide for a suggested retail price of $125 for the 1TB model and $210 for the 2TB model. They are backed by a five-year limited warranty to give users peace of mind.
Specifications of Samsung SSD 990 EVO | |
---|---|
Interface. | PCIe Gen 4.0 x4 / 5.0 x2 NVMe 2.0 |
Form factor | M.2 (2280) |
Memory type | V-NAND 3-TLC |
Sequential read/write speed | up to 5,000MB/s / up to 4,200MB/s |
Random read/write speed | up to 700K IOPS / up to 800K IOPS |
Data encryption | AES 256-bit full-disk encryption, TCG/Opal V2.0, encrypted drive (IEEE1667) |
Total Bytes Written | 600 terabytes |
Source: Samsung