Samsung begins mass production of new 9th generation QLC V-NAND memory

Samsung has become the first company in the memory industry to launch mass production of 9th generation Quad-Level Cell (QLC) V-NAND. The tech giant first announced the new V9 QLC memory in August, and this week confirmed that the latest technology is already on the production lines.

Here's What We Know

The new memory became available for mass production just a few months after the launch of the 9th generation Triple Level Cell (TLC). Samsung began manufacturing TLC V-NAND in April and is now launching new QLC technology. This will help it become the market leader in high-capacity, high-speed flash memory.

The 9th generation QLC V-NAND features an 86% increase in bit density compared to the previous V7 QLC version. It offers I/O speeds of up to 3.2GB/s and supports SLC/TLC buffering.

Samsung uses a new Designed Mold technology to improve the spacing of memory cells, which ensures their stability and increases efficiency.

Channel Hole Etching technology allows for the highest number of memory layers, and Predictive Program monitors cell changes to reduce errors.

With the new 9th Generation QLC V-NAND, Samsung promises to deliver advanced SSD solutions that meet the needs of the AI era.

Source: Samsung